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Appearance of ferromagnetism in co-doped CeO2 diluted magnetic semiconductors prepared by solid-state reaction of ferromagnetism at room temperature. The electronic structure of as-prepared and postannealed Co-doped CeO2
Estimation of parameters of charge carriers in dielectric materials by CELIV method by the time-of-flight method has been used for several decades to study organic semiconductors and dielectrics
Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio studyMagnetic anisotropy in low dimensional semiconductors can lead to long-range ferromagnetic order
Surface states and annihilation characteristics of positrons trapped at reconstructed semiconductor surfaces on localization and extent of the positron surface state wave function at the semiconductor surface is explored
Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxyThe capacitive characteristics of metal–insulator-semiconductor (MIS) structures based
Методика моделирования электронных свойств объемных полупроводниковых соединений of the fundamental electronic properties of bulk
semiconductors based on the electron density functional theory
Anisotropic ferromagnetism in Co-implanted TiO2 rutile-crystalline (1 0 0), (0 0 1) and (1 1 0) TiO2 substrates of rutile structure have been heavily irradiated by Co
Positron probes of the Ge(1 0 0) surface: The effects of surface reconstructions and electron-positron correlations on positron trapping and annihilation characteristics their sensitivity to the specific atomic structure of the topmost layers of Ge(1 0 0). A comparison with PAES data
Admittance investigation of MIS structures with GgTe-based single quantum wells when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on Hg
Error modeling in semiconductor memory of computersDefects in semiconductor memory chips and errors of their functioning are of interest to both
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