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Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivityHe effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100

Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structuresGas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3

Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivityO3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established

Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear of the β-Ga2O3 single crystal wafers applied to the plane is studied. A decrease in crystallinity within a

Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds filmsThe effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3

Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structureα-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase

Levilactobacillus brevis 47f: Bioadaptation to Low Doses of Xenobiotics in Aquaculture

High sensitivity low-temperature hydrogen sensors based on SnO2/κ(ε)-Ga2O3:Sn heterostructureThe structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were

The Use of Thoracoscopic Release in the Surgical Correction of Thoracic Scoliosis in Children

Identification of Antimicrobial Peptides from Novel Lactobacillus fermentum Strain

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