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Positron states and annihilation characteristics at semiconductor surfaces surface-state wave function is localized mainly on the vacuum side of the topmost layer of Ge atoms
Low-energy positrons at the Si(100)-2×1 surface with adsorbed hydrogen and oxygen that the adsorption of hydrogen and oxygen on the Si(100) surface displaces the positron surface state wave function
Automatic modeling of surfaces with identical slopes and techniques of surface formation in the AutoCAD environment are described using the functional language Auto
Controlling the electronic properties of a nanoporous carbon surface by modifying the pores with alkali metal atomsWe investigate a process of controlling the electronic properties of a surface of nanoporous carbon
Uniformization of one-parametric families of complex tori of ordinary differential equations for critical points of elliptic functions uniformizing surfaces
Theoretical studies of positron states and annihilation characteristics at the oxidized Cu(100) surface extent and localization of the positron surface state wave function and annihilation probabilities
Theoretical aspects of studies of oxide and semiconductor surfaces using low energy positrons at the surfaces are found to affect localization and spatial extent of the positron surface-state wave functions
Uniformization of one-parametric families of complex tori of ordinary differential equations for critical points of elliptic functions uniformizing surfaces
Studies of the Auger spectrum from the Si(1 1 1) surface using positron annihilation induced Auger electron spectroscopy) surfaces. Estimates of the positron surface state binding energy, work function, and annihilation
Annihilation of positrons trapped at the (100) and (111) surfaces of SiWe present results of theoretical studies of positron surface states and positron annihilation
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