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Positron states and annihilation characteristics at semiconductor surfaces surface-state wave function is localized mainly on the vacuum side of the topmost layer of Ge atoms
Vekua integral operators on Riemann surfacesOn an arbitrary (in general, noncompact) Riemann surface R, we study integral operators T and II
Mathematical modeling of stress waves in the problem of Lamb-plane with a concentrated explosive impact in the form of Delta functions. Illustrates changes in the elastic
Positron states and annihilation characteristics at the (100), (110), and (111) surfaces of alkali metals characteristics at the clean surfaces of alkali metals. Positron surface states and positron work functions have
Analytic functions with polar and logarithmic singularities and locally convex boundary valuesWe consider a family of functions which have a pole of order m and a logarithmic term
Ab initio calculations of absolute surface energies of clean and hydrogen covered 3C-SiC(001), (110) and (111) surfacesThe absolute surface energies of three major low index surfaces of cubic silicon carbide (3C
THE MICROSCOPIC THEORY OF SURFACE-PROPERTIES OF ANHARMONIC CRYSTALS .3. SINGULAR SURFACES OF SIMPLE CUBIC-CRYSTALS have been calculated. The excess thermodynamic functions have been found: the surface energy
Phreatic surface flow from a near-reservoir saturated tongue moisture through a phreatic surface is considered. The hydraulic head is governed by the Laplace equation
Surface states and annihilation characteristics of positrons trapped at reconstructed semiconductor surfaces on localization and extent of the positron surface state wave function at the semiconductor surface is explored
Studies of positron states and annihilation characteristics at the reconstructed (100) surface of GaAs calculations of positron surface states and annihilation characteristics for As- and Ga-rich reconstructed (100
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