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Magnetic ordering in X-Y-N 2 semiconductors (X=Mg, Zn; Y=Si, Ge) doped with Cr, Mn, and Fe atoms
Krivosheeva, A. V., Shaposhnikov, V. L.
Structure and properties of ternary nitrides MgSiN2, MgGeN2, ZnSiN2, and ZnGeN2 are investigated
Solution Processing of Methylammonium Lead Iodide Perovskite from γ-Butyrolactone: Crystallization Mediated by Solvation Equilibrium
Fateev S.A., Petrov A.A., Khrustalev V.N., Dorovatovskii P.V., Zubavichus Y.V., Goodilin E.A., Tarasov A.B.
structures and morphology. The composition and crystal structures of the adducts depend on the coordination
Spin-texture inversion in the giant Rashba semiconductor BiTeI
Maaß, Henriette, Seibel, Christoph, Tusche, Christian, Eremeev, Sergey V., Peixoto, Thiago R. F., Tereshchenko, Oleg E., Kokh, Konstantin A., Chulkov, Evgueni V., Kirschner, Jürgen, Bentmann, Hendrik, Reinert, Friedrich
Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation
Influence of Single Dye Molecules on Temperature and Time Dependent Optical Properties of CdSe/ZnS Quantum Dots
Zenkevich, E. I., Stupak, A. P., Kowerko, D., von Borczyskowski, C.
Optical spectroscopy on ensembles and single CdSe/ZnS semiconductor quantum dots (QDs) demonstrates
ПЕРСПЕКТИВЫ РАЗВИТИЯ МИКРОЭЛЕКТРОНИКИ В РОССИИ С УЧЕТОМ ИЗМЕНЕНИЯ МЕЖДУНАРОДНОЙ КОНЪЮНКТУРЫ
Брагин Д.А.
of semiconductor products and microelectronics are mainly concentrated in the United States, Taiwan, Japan, South
Особенности спектров пропускания и значений ширины запрещённой зоны прямозонных полупроводниковых материалов в объёмном и пленочном состояниях
Осмоловская, Т. Н.
случае будет меньше. The influence of the structure of samples of semiconductor materials, on the example
Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects
Poklonski, N. A., Vyrko, S. A., Kovalev, A. I., Anikeev, I. I., Gorbachuk, N. I.
The study of thermoelectric properties of crystalline semiconductors with structural defects
Size-Dependent Non-FRET Photoluminescence Quenching in Nanocomposites Based on Semiconductor Quantum Dots CdSe/ZnS and Functionalized Porphyrin Ligands
Zenkevich, E. I., Blaudeck, T., Milekhin, A., von Borczyskowski, C.
of colloidal semiconductor quantum dots induced by functionalized porphyrin molecules attached to the surface
Theoretical aspects of studies of oxide and semiconductor surfaces using low energy positrons
Fazleev N., Maddox W., Weiss A.
- and Ga-rich reconstructed GaAs(100) surfaces. The variations in atomic structure and chemical composition
Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells
Voytsekhovskiy, Alexander V., Gorn, Dmitriy Igorevich
Electrophysical characteristics of metal-insulator-semiconductor structures comprising Cd

Страница 9 из 5172

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