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The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

Digital literacy and digital didactics for the development of new learning models research methods. As a result, the principle of personalization implies the ability of a student

Hydrogen passivation effects in InGaAlP and InGaP in p-InGaP. The influence of hydrogen treatment mode (direct plasma or a crossed-beams source in which

Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP treatment at 250°C. Proton implantation with energy 100 keV is shown to create high-resistivity layers (104

Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb by the assumption that hydrogen is a deep donor in these materials. The effects of the hydrogen treatment mode

Основные подходы к моделированию устойчивости почв (обзор)-chemical ones. For the latter case, the authors consider a method and a model based on the theory of encounters

Ensuring the safety of operation of the truck with the semi-trailer safety in the operation of road trains consisting of a truck tractor and a semi-trailer, namely

Modeling of forming technological errors in processing by gear shaping machine

Применение методики форсайт-прогнозирования для определения направлений развития моногородов Иркутской области

Study of Deformations Field in the Working Zone of Vertical Milling Machine of working area of the machine. The changes of deformations for different cutting pattern are analysed, a

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