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Information culture as a Criterion of information society formation
Grevtsov V.E.
Germanium electrodeposition into porous silicon for silicon-germanium alloying
Grevtsov, N., Chubenko, E., Bondarenko, V., Gavrilin, I., Dronov, A., Gavrilov, S.
Electrochemical deposition of indium into oxidized and unoxidized porous silicon
Grevtsov, N. L., Chubenko, E. B., Bondarenko, V. P., Gavrilin, I., Dronov, A., Gavrilov, S.
Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors
Grevtsov, N., Lopato, U., Dolgyi, A., Chubenko, E., Bondarenko, V., Smirnov, A., Stsiapanau, A., Dronov, A., Gavrilin, I., Gavrilov, S.
A new approach for producing of film structures based on Si1-xGex
Gavrilin, I. M., Grevtsov, N. L., Pavlikov, A.V., Dronov, A. A., Chubenko, E. B., Bondarenko, V. P., Gavrilov, S. A.
Selective electrochemical deposition of indium in-between silicon nanowire arrays fabricated by metal-assisted chemical etching
Grevtsov, N., Chubenko, E., Petrovich, V., Bondarenko, V., Gavrilin, I., Dronov, A., Gavrilov, S.
Composition-Adjustable Silicon-Germanium Alloy Films based on Porous Silicon Matrices
Grevtsov, N., Chubenko, E., Bondarenko, V., Gavrilin, I., Dronov, A., Gavrilov, S., Rymski, G., Yanushkevich, K., Goroshko, D., Argunov, E.
Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys
Grevtsov, N., Chubenko, E., Bondarenko, V., Gavrilin, I., Dronov, A., Gavrilov, S., Goroshko, D., Goroshko, O., Rymski, G., Yanushkevich, K.
demonstrate a Seebeck coefficient of -450 μV/K and an estimated figure-of-merit ZT value of up to 0.72 at 450
Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing
Grevtsov, N., Chubenko, E., Gavrilin, I., Goroshko, D., Goroshko, O., Tsiniaikin, I., Bondarenko, V., Murtazin, M., Dronov, A., Gavrilov, S.
that the highest Seebeck coefficient (􀀀 505 μV/K at 450 K) and Power Factor (1950 μW/(m⋅K2) at 400 K) values were
Raman spectra of silicon/germanium alloy thin films based on porous silicon
Chubenko, E. B., Grevtsov, N. L., Bondarenko, V. P., Gavrilin, I. M., Pavlikov, A. V., Dronov, A. A., Volkova, L. S., Gavrilov, S. A.

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