Magnetoresistance of (Zn₁₋xMnx)₃As₂ in region of hopping conductivityMagnetoresistance (MR) of (Zn1-xMnx)3As2 (0 ≤ x ≤ 0.13) is measured at 4 < T < 20
K. In applied
Hopping magnetotransport of the band-gap tuningCu2Zn(SnxGe1-x)Se4 crystalsLähderanta, E.,
Hajdeu-Chicaros, E.,
Shakhov, M.,
Guc, M.,
Bodnar, I. V.,
Arushanov, E.,
Lisunov, K. G. an activated character within the whole investigated temperature range between T ~ 10 320
K, attaining a
Magnetotransport and conductivity mehanisms in Cu2ZnSnxGe1-xS4 single crystalsLahderanta, E.,
Hajdeu-Chicaros, E.,
Guc, M.,
Shakhov, M.,
Zakharchuk, I.,
Bodnar, I. V.,
Arushanov, E.,
Lisunov, K. G.,
Боднарь, И. В. –0.70, in the
temperature range of T ~ 50–300
K in pulsed magnetic field of B up to
20 T. The Mott variable
Mechanisms of hopping conductivity of p-CdSb:Ni in magnetic field is observed in # 2, and the Shklovskii-Efros VRH conductivity in # 1 and # 3 at T ≤2.5
K. However, in weak