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Ag+-ion implantation of silicon© 2018 A. L. Stepanov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorobev, and Y. N. Osin The new results

Ag+-ion implantation of silicon© 2018 A. L. Stepanov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorobev, and Y. N. Osin The new results

Local analysis of porous silicon structure fabricated by nontraditional approach. For this purposes Ag-ion implantation into monocrystalline c-Si substrates at energy of 30 keV with dose of 1

Spectral ellipsometry of cobalt-ions implanted silicon surface ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated

Optical properties of chalcogenide glasses with ion-synthesized copper nanoparticles+ ions (energy 40 keV, radiation dose 1. 5 × 1017 ion/cm2, fixed current density in the ion beam 1 μA/cm2

Specificity of silver nanoparticle synthesis in quartz glass upon low-energy ion implantation was carried out using a low-energy (30 keV) implantation of Ag + ions to high fluences. After the implantation

Scanning MOKE investigation of ion-beam-synthesized silicide filmsFe ions with an energy of 40 keV were implanted into Si plates with the fluence varying

Scanning MOKE investigation of ion-beam-synthesized silicide filmsFe ions with an energy of 40 keV were implanted into Si plates with the fluence varying

Analysis of Surface Morphology and Chemical Composition of Silicon Implanted with Copper Ions of 40 keV and doses in a range of 3.1 × 1015–1.25 × 1017 ions/cm2 for a current density of 8 μA/cm2

Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions observations of sputtering of the Si surface during the implantation with Ag+ ions with an energy of 30 keV

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