RBS-channeling analysis of er D-doped LNP(001) crystal was carried out by
Rutherford backscattering spectromery with the channeling technique
Analytical technologies for thin coating element material diagnostics with PXWR application element composition in the bulk and thin surface layer of studied objects.
Rutherford backscattering RBS-channeling analysis of er D-doped LNP(001) crystal was carried out by
Rutherford backscattering spectromery with the channeling technique
RBS-channeling analysis of er D-doped LNP(001) crystal was carried out by
Rutherford backscattering spectromery with the channeling technique
Self-Ion Assisted Modification of Elastomer and Its Micro- and Macroscopic PropertiesThe composition of Zr-based thin films on rubber was investigated by utilizing the
Rutherford Defects in α-Fe induced by intense-pulsed ion beam (IPIB)Using
Rutherford back-scattering (RBS), secondary ion mass spectrometry (SIMS), Auger
Silicon hyperdoped with selenium for broad band infrared photodetectors and solar cellsKomarov, F.,
Parkhomenko, I.,
Wang, Ting,
Milchanin, O.,
Zhussupbekov, K.,
Zhussupbekova, A.,
Wendler, E. was investigated by
Rutherford backscattering. The crystallinity of the doped silicon layer and the fraction of Se