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Analysis of the nBn-type barrier structures for infrared photodiode detectors

UV photodetectors based on wide-gap AlGaN semiconductors

Molecular dynamics simulations of the growth of Ge on Si

Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM

Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods

Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots

Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters

Electrical properties of the V-defects of epitaxial HgCdTeElectrical properties of the V-defects of epitaxial HgCdTe

Ion implantation and ion milling in MBE Hg1-xCdxNe films

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