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Er:KY(WO42 and Er:LiYF4 crystals for eye-safe in-band pumped lasers

Laser Performance of Er,Yb:YAl3(BO3)4 Crystals with Different Erbium Concentrations was investigated. A maximal output power of 1.6 W in CW and 2.7 W in QCW regimes was obtained at 1522 nm

Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation of microscopic interaction parameters according to the Förster-Dexter theory for a dipoledipole interaction

Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation parameters according to the Förster-Dexter theory for a dipoledipole interaction. Diode-pumped continuous

Energy transfer parameters and microchip diode-pumped CW laser performance of Tm, Ho:KYW crystal investigated. A diode-pumped CW Tm,Ho:KYW microchip laser was realized. Maximum output power of 77 mW at 2070

Radiation-balanced lasing and amplification

CW and Q-switched diode-pumped laser operation of Yb 3+:NaLa(MoO4)2 was to our knowledge, demonstrated for the first time. A CW output power of 220 mW and slope efficiency of 46

Er:KY(WO42 and Er:LiYF4 crystals for eye-safe in-band pumped lasers

Passively Q-switched Er,Yb:GdAl3(BO3)4 laser with SWCNT as a saturable absorberPassively Q-switched Er,Yb:GdAl3(BO3)4 laser with SWCNT as a saturable absorber

Diode-pumped Er,Yb:GdAB laser passively Q-switched by MBE-grown Cr:ZnS/Cr,Co:ZnS thin filmsDiode-pumped Er,Yb:GdAB laser passively Q-switched by MBE-grown Cr:ZnS/Cr,Co:ZnS thin films

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