Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions

Timofeev, V. A.; Nikiforov, Alexander I.; Mashanov, V. I.; Tuktamyshev, A. R.; Loshkarev, I. D.; Kokhanenko, Andrey P.

Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions

Timofeev, V. A., Nikiforov, Alexander I., Mashanov, V. I., Tuktamyshev, A. R., Loshkarev, I. D., Kokhanenko, Andrey P.

Дата публикации: 2015

Дата публикации в реестре: 2020-03-03T18:55:46Z

Аннотация:

Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films during structure growth has been controlled by the reflection high-energy electron diffraction method. Films with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions are grown with Sn content changing from 2 to 10 % at temperatures in the interval 150–350°С. The stressed state, the composition, and the lattice parameter are studied by the x-ray diffraction method using Omega-scan curves and reciprocal space maps. A tensile strain in the Ge film during Ge/Ge0.9Sn0.1/Si structure growth has reached 0.86%.

Ключевые слова:
молекулярно-лучевая эпитаксия, эпитаксиальные пленки, тонкие пленки, гетероструктуры, германий

Тип: статьи в журналах

Источник: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969