Представлен анализ особенностей нагрева кремниевых пластин СВЧ энергией. Проанализированы механизмы, ответственные за взаимодействие микроволн с веществом. In modern micro- and nanoelectronics, heating of materials is an essential part of technological processes. One of the most relevant and promising methods of heating electronic equipment materials is the use of microwave radiation. The paper presents an analysis of the peculiarities of silicon wafers heating with microwave energy. The mechanisms responsible for the interaction of microwaves with semiconductor materials were analyzed.