Halide-hydrogen vapor transport for growth of ZnO single crystals with controllable electrical parameters transport agent for ZnO
single crystals growth in the closed
growth chambers are shown in comparison with Cl
Thermal expansion anisotropy of CuIn11Se17 single crystals, respectively. It is shown that the obtained
single crystals crystallize in
a hexagonal structure
Halide-hydrogen vapor transport for growth of ZnO single crystals with controllable electrical parameters transport agent for ZnO
single crystals growth in the closed
growth chambers are shown in comparison with Cl
Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gapBodnar, I. V.,
Khoroshko, V. V.,
Yashchuk, V. A.,
Gremenok, V. F.,
Mohsin Kazi,
Khandaker, M. U.,
Zubar, T. I.,
Tishkevich, D. I.,
Trukhanov, A. V.,
Trukhanov, S. V. This work describes the production of
single crystals of the semiconducting quaternary compound Cu
2 Выращивание монокристаллов Cu2ZnGeS4 тетрагональной структуре. Cu
2ZnGeS4
single crystals were grown by chemical vapor transport reaction method
Optical spectroscopy of Yb3+ in the Cs2NaYF6 single crystal in the Cs
2NaYF6
single crystal are presented. The Stark level energies of the Yb3+ multiplets
Flux crystal growth of Cu2GaBO5 and Cu2AlBO5© 2020 Elsevier B.V. The results of
growth of two oxyborate
single crystals, Cu
2GaBO5 and Cu
2AlBO5