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Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets
Hayato Hasebe, Kazuki Kido, Haruki Takenaka, Masami Mesuda, Kaoru Toko, Migas, D. B., Takashi Suemasu
BaSi2 is one of the emerging materials for thin-film solar cell applications; hence
Electronic structure and vibrational properties of Ba8Si46,Ba8AgnSi46-n, and Ba8AunSi46-n
Tse J.S., Iitaka T., Kume T., Shimizu H., Parlinski K., Fukuoka H., Yamanaka S.
Electronic structure and vibrational properties of Ba8Si46,Ba8AgnSi46-n, and Ba8AunSi46-n
Effects of hydrogen on trap neutralization in BaSi2 with interstitial silicon atoms
Sho Aonuki, Kaoru Toko, Filonov, A. B., Migas, D. B., Takashi Suemasu
Semiconducting barium disilicide (BaSi2) is one of emerging materials for solar cell applications
Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells
Xu, Z., Sato, T., Benincasa, L., Yamashita, Y., Deng, T., Gotoh, K., Toko, K., Usami, N., Filonov, A. B., Migas, D. B., Shohonov, D. A., Suemasu, T., Филонов, А. Б., Мигас, Д. Б., Шохонов, Д. А.
Semiconducting barium disilicide (BaSi2) is an emerging material for solar cell applications
Electronic properties of thin BaSi2 films with different orientations
Migas, D. B., Bogorodz, V. O., Krivosheeva, A. V., Shaposhnikov, V. L., Filonov, A. B., Borisenko, V. E., Мигас, Д. Б., Богородь, В. О., Кривошеева, А. В., Шапошников, В. Л., Филонов, А. Б., Борисенко, В. Е.
2 thin films with (001), (010), (100), (011), (101), (110), and (111) surfaces. It is found that BaSi
Transport properties of n- and p-type polycrystalline BaSi2
Deng, T., Suemasu, T., Shohonov, D. A., Samusevich, I. S., Filonov, A. B., Migas, D. B., Borisenko, V. E., Шохонов, Д. А., Самусевич, И. С., Филонов, А. Б., Мигас, Д. Б., Борисенко, В. Е.
Electron and hole mobilities versus temperature in semiconducting barium disilicide (BaSi2) have
Giant dipole resonance of Ba in Ba8 Si46: An approach for studying high-pressure induced phase transitions of nanostructured materials
Sternemann H., Sternemann C., Schacht A., Tolan M., Tse J.S., Desgreniers S., Cai Y.Q., Hiraoka N., Vankó G., Soininen J.A.
Giant dipole resonance of Ba in Ba8 Si46: An approach for studying high-pressure induced phase
Effects of grain size on the charge carrier mobility of BaSi2 polycrystaline thin film
Shohonov, D., Samusevich, I., Filonov, A. B., Migas, D.
Effects of grain size on the charge carrier mobility of BaSi2 polycrystaline thin film
Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen
Xu, Z., Gotoh, K., Deng, T., Honda, S., Toko, K., Usami, N., Suemasu, T., Shohonov, D. A., Filonov, A. B., Migas, D. B., Borisenko, V. E., Шохонов, Д. А., Филонов, А. Б., Мигас, Д. Б., Борисенко, В. Е.
Passivation of barium disilicide (BaSi2) films is very important for their use in solar cell
Recent Progress Toward Realization of High-Efficiency BaSi2 Solar Cells: Thin-Film Deposition Techniques and Passivation of Defects
Suemasu, T., Migas, D. B.
to realize a decarbonized society. Semiconducting barium disilicide (BaSi2), which is composed of nontoxic

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