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Nitrogen doped twisted graphene
Komissarov, I. V., Kovalchuk, N. G., Lazauskas, A., Andrulevicius, M., Tamulevicius, S., Kargin, N. I., Prischepa, S. L., Комиссаров, И. В., Ковальчук, Н. Г., Прищепа, С. Л.
Micro Raman Investigation of Graphene Synthesized by Atmospheric Pressure CVD on Copper Foil from Decane
Komissarov, I. V., Kovalchuk, N. G., Labunov, V. A., Prischepa, S. L.
Россия-Бразилия: транскультурные диалоги
Bragin V.G., Жукова О.А., Зимин А.И., Komissarov B.N., Konstantinova N.S., Malkovskaya I.A., Moseikina M.N., Okuneva L.S., Pudov A.G., Serebryanyi S.D., Тлостанова М.В., Виллела Алвес Ракель, Желлажиас Нейде, Кавальере Арлете, Мелло де Соуза Нельсон, Модерно Ж.Р., Паим Антонио, Подоль Я.С., Безерра Марселу, Васконселлос Ансельмо, Морайш Фредерико, Нобре Марлос
Possibility of determining the graphene doping level using Raman spectra
Kovalchuk, N. G., Nigerish, K. A., Mikhalik, M. M., Kargin, N. I., Komissarov, I. V., Prischepa, S. L., Прищепа, С. Л.
Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction
Golovach, A. I., Kovalchuk, N. G., Mikhalik, M. M., Kukuts, Y., Dronina, L., Komissarov, I. V., Prischepa, S. L.
Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction
The excitation power dependence of the Raman G and 2D peaks of suspended graphene grown by chemical vapor deposition
Nigerish, K., Mikhalik, M., Kovalchuk, N., Komissarov, I. V.
Superconducting Critical Temperature and Softening of the Phonon Spectrum in Ultrathin Nb and NbN/graphene hybrids
Prischepa, S. L., Kushnir, V. N., Cirillo, C., Granata, V., Komissarov, I. V., Kovalchuk, N. G., Mikhalik, M. M., Danilyuk, A. L., Svito, I. A., Andrulevicius, M., Attanasio, C.
graphene. Two different superconductors are used for this purpose, Nb and NbN. An increase
Plasma assisted-MBE of GaN and AlN on graphene buffer layers
Borisenko, D. P., Gusev, A. S., Kargin, N. I., Komissarov, I. V., Kovalchuk, N. G., Labunov, V. A., Комиссаров, И. В., Ковальчук, Н. Г., Лабунов, В. А.
. It was shown that epitaxial GaN and AlN films with close to 2D surface morphology can be obtained by plasma
Raman spectroscopy study of the charge carrier concentration and mechanical stresses in graphene transferred employing different frames
Dronina, L. A., Mikhalik, M. M., Kovalchuk, N. G., Niherysh, K. A., Felsharuk, A. V., Prischepa, S. L., Komissarov, I. V.
The charge carrier concentration (n) and relative strain (ε) in graphene synthesized by chemical
Raman study of CVD graphene irradiated by swift heavy ions
Kolesov, E. A., Tivanov, M. S., Korolik, O. V., Apel, P. Yu., Skuratov, V. A., Saad, A. M., Komissarov, I. V., Swic, A., Żukowski, P. V., Koltunowicz, T. N., Комиссаров, И. В.
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2

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