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A W-Band Pulsed ENDOR Spectrometer: Setup and Application to Transition Metal Centers
Gromov I., Krymov V., Manikandan P., Arieli D., Goldfarb D.
The design and performance of a 95 GHz pulsed W-band EPR/ ENDOR spectrometer is described
A W-Band Pulsed ENDOR Spectrometer: Setup and Application to Transition Metal Centers
Gromov I., Krymov V., Manikandan P., Arieli D., Goldfarb D.
The design and performance of a 95 GHz pulsed W-band EPR/ ENDOR spectrometer is described
A Variable Temperature X- and W-Band EPR Study of Fe-Doped SiCN Ceramics Annealed at 1000, 1100, and 1285 °C: Dangling Bonds, Ferromagnetism and Superparamagnetism
, the SiCN ceramic, annealed at 1100 °C, was studied by EPR at 300 K at W-band (93.96 GHz
Electron band structure of the high pressure cubic phase of AlH3
Shi H., Yim W.L., Zarifi N., Tse J.S.
Electron band structure of the high pressure cubic phase of AlH3
Band gap tuning in poly(triazine imide), a nonmetallic photocatalyst
McDermott E.J., Moewes A., Wirnhier E., Schnick W., Virdi K.S., Scheu C., Kauffmann Y., Kaplan W.D., Kurmaev E.Z.
Band gap tuning in poly(triazine imide), a nonmetallic photocatalyst
Magnesium double nitride Mg3GaN3 as new host lattice for Eu2+ doping: Synthesis, structural studies, luminescence, and band-gap determination
Hintze F., Seibald M., Schnick W., Johnson N.W., Muir D., Moewes A.
> doping: Synthesis, structural studies, luminescence, and band-gap determination
Light-induced X,W-band Electron Spin Resonance study of double-crystalline donor-acceptor P3HT-b-PPerAcr block copolymers in solid thin films
Konkin A., Singh C., Orlinskii S., Mamin G., Aganov A., Lohwasser R., Ritter U., Scharff P., Thelakkat M., Hoppe H.
© 2016 Elsevier B.V. All rights reserved.Light-induced X,W-band Electron Spin Resonance (LESR
Spectroscopy and laser performance of in-band pumped Er:LLF and Er:YLF crystals
Kurilchik S., Gorbachenya K., Kisel V., Kuleshov N., Nizamutdinov A., Korableva S., Semashko V.
in-band pumping. Output power of 58 mW and slope efficiency of 21 % at 1606 nm were achieved.
Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation
Huan, Y. W., Xu, K., Liu, W. J., Zhang, H., Golosov, D. A., Xia, C. T., Yu, H. Y., Wu, X. H., Sun, Q. Q., Ding, S. J., Голосов, Д. А.
investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3
Investigation of energy band at atomic layer deposited AZO/β-Ga2O3(201) heterojunctions
Sun, S. M., Liu, W. J., Golosov, D. A., Gu, C. J., Ding, S. J., Голосов, Д. А.
The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X

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