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Formation of porous silicon/copper oxides/titanium dioxide heterostructures
Denisov, N. M.
Composite porous silicon/copper oxides/titanium dioxide structures have been formed via
Electrochemical deposition of indium into oxidized and unoxidized porous silicon
Grevtsov, N. L., Chubenko, E. B., Bondarenko, V. P., Gavrilin, I., Dronov, A., Gavrilov, S.
and chemical oxidation of porous silicon cause the metal particles being deposited into its pores to shift
Effect of the nature of silicon oxide structures on the activity of an alumina-chromium catalyst in the reaction of iso-butane dehydrogenation
Bekmukhamedov G., Egorova S., Lamberov A.
The formation of silicon oxide structures in the composition of an alumina-chromium catalyst
Electrochemical deposition of zinc oxide nanostructures into porous silicon template
Chubenko, E. B., Redko, S. V., Sherstnev, I. A., Petrovich, V. A.
In this paper, we describe an regular matrix of zinc oxide (ZnO) from nonaqueous solution
Oxygen Packing Fraction and the Structure of Silicon and Germanium Oxide Glasses
Du X., Tse J.S.
Oxygen Packing Fraction and the Structure of Silicon and Germanium Oxide Glasses
Oxidized porous silicon: from dielectric isolation to integrated optical waveguides
Yakovtseva, V. A., Dolgyi, L., Kazuchits, N., Vorozov, N., Balucani, M., Bondarenko, V. P., Franchina, L., Lamedica, G., Ferrari, A., Яковцева, В. А., Долгий, Л. Н., Бондаренко, В. П.
A brief review of 20-years research of formation, processing and utilizing of oxidized porous
Effect of the nature of silicon oxide structures on the activity of an alumina-chromium catalyst in the reaction of iso-butane dehydrogenation
Bekmukhamedov G., Egorova S., Lamberov A.
The formation of silicon oxide structures in the composition of an alumina-chromium catalyst
Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals
Balucani, M., Nenzi, P., Chubenko, E. B., Klyshko, A., Bondarenko, V., Чубенко, Е. Б., Клышко, А. А., Бондаренко, В. П.
that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a
Charging properties of the silicon / zinc oxide nanoparticle heterostructure
Kuraptsova, A. A., Danilyuk, A. L.
Zinc oxide ZnO is a semiconductor with a direct band gap of 3.37 eV at room temperature, which
ZnO films and crystals on bulk silicon and SOI wafers: Formation, Properties and Applications
Chubenko, E. B., Klyshko, A., Bondarenko, V., Balucani, M., Belous, A., Malyshev, V., Чубенко, Е. Б., Клышко, А. А., Бондаренко, В. П., Белоус, А. И., Малышев, В. С.
processes of ZnO on silicon is presented. The influence of the electrochemical process parameters

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