Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
Nesmelov, Sergey N.,
Dzyadukh, Stanislav M.,
Dvoretsky, Sergei A.,
Mikhailov, Nikolay N.,
Sidorov, Georgiy Yu.,
Yakushev, Maxim V.,
Voytsekhovskiy, Alexander V.
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