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Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal SystemThe self-heating effect exerts a considerable influence on the characteristics of high
Output Characteristics of Graphene Field Effect TransistorsThe use of graphene, which has high mobility of charge carriers, high thermal conductivity and a
Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling modelGaN/GaN high electron mobility transistor.
Robust random number generator based on field effect transistor of field effect transistor connected in a such a way that avalanche electron current emerges when an input
Нитрид-галлиевый гетероструктурный полевой транзистор с системой теплоотвода на основе канавки в слое пассивации, заполненной материалом с высокой теплопроводностьюGallium nitride heterostructure field-effect transistor with a heat-removal system based on a
Organic memristive device as transistor: Working principle and possible applications as a transistor, so applying a modulatory gate voltage. Even if transistors and organic memristive
Формирование ALGaN/GaN гетероструктур для силовой и СВЧ электроники с помощью аммиачной молекулярно-пучковой эпитаксии by molecular beam epitaxy for high electron mobility transistors on sapphire and silicon carbide substrates
Creating a high-temperature spin injector and a spin-wave transistor based on EuOResults of the creation of a high-temperature spin injector and a spin-wave transistor based on Eu
Экспериментальное исследование деградации изделий электронной техники the degradation of the
functional parameters of three types of high-power transistors
The shift of Energy levels of a quantum dot in single electron transistorThe shift of Energy levels of a quantum dot in single electron transistor model is investigated
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