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Near-field optical taper antennas fabricated with a highly replicable ac electrochemical etching method
Kharintsev S., Noskov A., Hoffmann G., Loos J.
This paper describes a novel chemical etching method to fabricate high quality near-field optical
Феноменологическая модель травления металлического покрытия в плазме газовой смеси
Емельянов, В.В., Купо, А.Н., Емельянов, В.А., Emelyanov, V.V., Kupo, A.N., Emelyanov, V.A.
-chemical etching of an aluminum coating is created, which is the basis of current-carrying microstructures
H1N1 influenza virus interaction with a porous layer of silicon nanowires
Gonchar K.A.
-assisted chemical etching of p-type highly doped crystalline silicon wafers, and consist of porous nanowires with a
Features of nanotemplates manufacturing on the II-VI compound substrates
Colibaba G., Monaico E., Goncearenco E., Inculet I., Tiginyanu I.
CdS and ZnO single crystal substrates for the preparation of nanoporous matrices by electrochemical etching
Characterization of the anodic film and corrosion resistance of an A535 aluminum alloy after intermetallics removal by different etching time
Chankitmunkong, Suwaree, Eskin, Dmitry G., Limmaneevichitr, Chaowalit, Kengkla, Nattarat, Diewwanit, Onnjira
intermetallics on the alloy surface by alkaline etching to improve the morphologies and properties of the anodic
Acid-Base Resistant Zone in Teeth with the Direct Restoration Using Different Adhesive System Generations: A Systematic Review
Khabadze Z., Shilyaeva E., Kotelnikova A., Todua D., Bakaev Y., Abdulkerimova S., Mordanov O.
is formed on both dentine and enamel. On dentine, the ABRZ is formed only when using self-etching adhesive
Формирование кремниевых нанонитей методом металл-стимулированного химического травления и исследование их оптических свойств
Бондаренко, А. В., Гирель, К. В., Невзоров, С. А., Гончар, К. А., Тимошенко, В. Ю., Bandarenka, H. V., Girel, K. V., Niauzorau, S. A., Gonchar, K. A., Timoshenko, V. U.
nanowires (SiNWs) formation by metal- assisted chemical etching (MACE) are introduced. Linear dependence
Dielectric influence on IV curve of graphene field effect transistor
Shostachenko S.A., Zakharchenko R.V., Zebrev G.I., Stanishevskiy Y.M., Kargin N.I.
by etching in oxygen plasma through a photolithographic mask. Metals electrodes of the drain, source
Morphology dependent optical properties of ZnO/SiNWs nanocomposites
Sharstniou, A., Niauzorau, S. A., Chubenko, E. B., Azeredo, B. P., Bondarenko, V. P., Невзоров, С. А., Чубенко, Е. Б., Бондаренко, В. П.
-shell nanostructures. SiNWs were fabricated by a two-step metal-assisted chemical etching and coated with Zn
Influence of a constant magnetic field on the uniformity of plasma generated by planar ICP source
Kotov, D. A., Yasunas, A.
etching and deposition for low-temperature high-density plasma generation at pressures of 0.05-10 Pa

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