Strontium ferromolybdate-based magnetic tunnel junctionsSuchaneck, G.,
Artiukh, E.,
Sobolev, N. A.,
Telesh, E. V.,
Kalanda, N.,
Kiselev, D. A.,
Ilina, T. S.,
Gerlach, G. -temperature magnetic
tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non
Hawking-like radiation in a FRW universe using the quasi-classical WKB/
tunneling method. In calculating the correct temperature of the Hawking
INDUCED ASTIGMATISM AFTER TUNNEL EXTRA CAPSULAR EXTRACTION OF CATARACT AND FACOEMULSIFICATION optimum
methods of surgery of a crystalline lens. During research it has been revealed that for surgery
Tunnel Magnetoresistance in Magnetic Tunnel Junctions with Embedded Nanoparticles© 1965-2012 IEEE. In this paper, we attempt the theoretical modeling of the magnetic
tunnel Tunneling of two bosonic atoms from a one-dimensional anharmonic trap-dimensional anharmonic trap. The
tunneling rate, an experimentally measurable parameter of the system, is calculated as a
Attosecond pulse formation via switching of resonant interaction by tunnel ionization of the IR-field strength and switching it back on near the IR-field zero crossings. We extend the
method Характеристика зоны гипестезии у пациентов с парестетической мералгией of affected nerves in the absence of diagnostic
methods such as magnetic resonance imaging
Resonant tunnel magnetoresistance in a double magnetic tunnel junctionWe present quasi-classical approach to calculate a spin-dependent current and
tunnel