Rapid chemical vapor deposition of graphitic carbon nitride films-CN) material with
stoichiometry close to its ideal g-C3
N4 form on silicon and glass substrates is demonstrated
Quasi-2D silicon structures based on ultrathin Me2SiMigas, D. B.,
Bogorodz, V. O.,
Filonov, A. B.,
Borisenko, V. E.,
Skorodumova, N. V.,
Мигас, Д. Б.,
Богородь, В. О.,
Филонов, А. Б.,
Борисенко, В. Е.,
Скородумова, Н. В. , Ca2Si, Sr2Si and Ba2Si have band gaps of 1.14 e
V, 0.69 e
V, 0.33 e
V and 0.19 e
V, respectively, while
Quasi-2D silicon structures based on ultrathin Me2Si (Me = Mg, Ca, Sr, Ba) filmsMigas, D. B.,
Bogorodz, V. O.,
Filonov, A. B.,
Borisenko, V. E.,
Skorodumova, N. V.,
Мигас, Д. Б.,
Богородь, В. О.,
Филонов, А. Б.,
Борисенко, В. Е.,
Скородумова, Н. В. , Ca2Si, Sr2Si and Ba2Si have band gaps of 1.14 e
V, 0.69 e
V, 0.33 e
V and 0.19 e
V, respectively, while
Energy and agrotechnical indicators in the testing of machine-tractor units with subsoiler of C,
N, and humus losses; the improvement of the water and air conditions in the soil; the prevention
Structural stability and electronic properties of 2D alkaline-earth metal silicides, germanides, and stannidesAlekseev, A. Y.,
Migas, D. B.,
Filonov, A. B.,
Borisenko, V. E.,
Skorodumova, V. N.,
Алексеев, А. Ю.,
Мигас, Д. Б.,
Филонов, А. Б.,
Борисенко, В. Е. Me2X are semiconductors with the gap varying from 0.12 to 1.01 e
V. Among them Mg- and Ca-based 2D