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Siberia within the Russian empire of the XVIII–beginning of the XX centuries
Beljanin, Dmitri N., Vorobieva, Tatiana V., Emelyanova, Elena K., Goroshko, Nadezhda V., Gulyaeva, Nina V., Zhigunova, Marina A., Zinoviev, Vassily, Fedorov, Roman Yu., Sherstova, Lyudmila I.
Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys
Grevtsov, N., Chubenko, E., Bondarenko, V., Gavrilin, I., Dronov, A., Gavrilov, S., Goroshko, D., Goroshko, O., Rymski, G., Yanushkevich, K.
demonstrate a Seebeck coefficient of -450 μV/K and an estimated figure-of-merit ZT value of up to 0.72 at 450
Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing
Grevtsov, N., Chubenko, E., Gavrilin, I., Goroshko, D., Goroshko, O., Tsiniaikin, I., Bondarenko, V., Murtazin, M., Dronov, A., Gavrilov, S.
that the highest Seebeck coefficient (􀀀 505 μV/K at 450 K) and Power Factor (1950 μW/(m⋅K2) at 400 K) values were
Si matrix charge state influence on photoresponse of Si layers with embedded β-FeSi2 nanocrystals
Goroshko, Dmitriy Lyvovich, Chusovitin, Evgeniy Anatolievich, Galkin, Nikolay Gennadievich, Chusovitina, S. V., Subbotin, Evgeniy Y., Tupkalo, A. V.
Thermoelectric properties of nanostructured material based on Si and GaSb
Goroshko, Dmitriy L., Subbotin, Evgeniy Y., Chusovitin, Evgeniy Anatolievich, Balagan, S. A., Galkin, Konstantin Nikolaevich, Dotsenko, Sergey Andreevich, Gutakovskii, Anton Konctantinovich, Khovaylo, Vladimir Vasilievich, Usenko, Andrey Aleksandrovich, Nazarov, V. U., Galkin, Nikolay Gennadievich
Photoconductivity and conductivity processes in Si-Sn films grown on Si(100) substrate at room temperature
Goroshko, Dmitriy Lyvovich, Galkin, Nikolay Gennadievich, Chusovitin, Evgeniy Anatolievich, Kitan, S. A., Subbotin, Evgeniy Y., Tupkalo, A. V.
Formation and temperature stability of GaSb islands on Si(111)
Subbotin, Evgeniy Y., Goroshko, Dmitriy Lyvovich, Chusovitina, S. V., Chusovitin, Evgeniy Anatolievich, Balagan, S. A., Nazarov, V. U., Galkin, Nikolay Gennadievich
Ab-initio calculation of phonon spectrum and thermal conductivity of Si with embedded GaSb nanocrystals
Balagan, S. A., Goroshko, Dmitriy Lyvovich, Nazarov, V. U., Galkin, Nikolay Gennadievich
Comparison of the structural, optical and thermoelectrical properties of Ca silicide films with variable composition on Si substrates
Galkin, Nikolay Gennadievich, Galkin, Konstantin Nikolaevich, Chernev, I. M., Goroshko, Dmitriy Lyvovich, Chusovitin, Evgeniy Anatolievich, Shevlyagin, A. V., Usenko, Andrey Aleksandrovich, Khovaylo, Vladimir Vasilievich
Ca silicide films—promising materials for silicon optoelectronics
Galkin, N. G., Galkin, K. N., Goroshko, D. L., Dotsenko, S. A., Kropachev, O. V., Chernev, I. M., Subbotin, E. Y., Alekseev, A. Yu., Migas, D. B., Fogarassy, Z., Pecz, B., Gutakovskii, A. K.
(3.9 eV) was observed for the CaSi film. Based on an analysis of the photoelectric properties of Ca2

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