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Synthesis and properties of the molybdenum and tungsten disulfide thin films
Zinnatullin A., Vakhitov I., Gumarov A., Nikitin S., Kharintsev S., Yanilkin I., Yusupov R.
MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon
Gumarov G., Petukhov V., Gumarov A., Khalikov R., Konovalov D., Valeev V., Khaibullin R.
implanted with 40 keV Fe + ions with a fluence of 3 × 10 17 cm -2 in the external magnetic field of 9.6 × 10
Change in the sign of the Kerr effect in ion-beam-synthesized Fe3Si films
Chirkov V., Gumarov G., Petukhov V., Valeev V., Denisov A.
-magnetic resonance, electron diffraction, and Auger spectroscopy. A change in the direction of rotation of the plane
MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon
Gumarov G., Petukhov V., Gumarov A., Khalikov R., Konovalov D., Valeev V., Khaibullin R.
implanted with 40 keV Fe + ions with a fluence of 3 × 10 17 cm -2 in the external magnetic field of 9.6 × 10
Effect of irradiation by argon ions on hydrogen transport through the surface oxide layer of zirconium
Evsin A., Begrambekov L., Gumarov A., Kashapov N., Luchkin A., Vakhitov I., Yanilkin I., Tagirov L.
not occur. It is proposed that oxygen depletion of the surface oxide layer, caused by ion bombardment, is a
Synthesis and properties of the molybdenum and tungsten disulfide thin films
Zinnatullin A., Vakhitov I., Gumarov A., Nikitin S., Kharintsev S., Yanilkin I., Yusupov R.
Magnetic and Mössbauer effect studies of ZnO thin film implanted with iron ions to high fluence
Zinnatullin A., Gumarov A., Gilmutdinov I., Valeev V., Khaibullin R., Vagizov F.
ions to a fluence of 1.5•1017 ion/cm2. As-implanted and post-annealed sample shows ferromagnetic
Analysis of Surface Morphology and Chemical Composition of Silicon Implanted with Copper Ions
Vorob’ev V.V., Gumarov A.I., Tagirov L.R., Rogov A.M., Nuzhdin V.I., Valeev V.F., Stepanov A.L.
of 40 keV and doses in a range of 3.1 × 1015–1.25 × 1017 ions/cm2 for a current density of 8 μA/cm2
Retraction notice to “Porous germanium with copper nanoparticles formed by ion implantation” [Vacuum 166 (2019) 84–87] (Vacuum (2019) 166 (84–87), (S0042207X19307195), (10.1016/j.vacuum.2019.04.062))
Rogov R.M., Nuzhdin V.I., Valeev V.F., Gumarov A.I., Tagirov L.R., Klimovich I.M., Stepanov A.L.
Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation
Gumarov A.I., Rogov A.M., Stepanov A.L.
+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1·1016 and 1.25·1017 ion/cm2

Страница 1 из 36049

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