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Low-field magnetic properties as indication of disorder, frustration and cluster formation effects in La₁₋xCaxMn₁₋yFeyO₃
Laiho, R., Lahderanta, E., Salminen, J., Lisunov, K. G., Zakhvalinskii, V. S.
Low-field (B=2–80 G) DC magnetic susceptibility, χ, is investigated in ceramic La₁₋xCaxMn₁₋yFeyO₃
Magnetoresistance of (Zn₁₋xMnx)₃As₂ in region of hopping conductivity
Laiho, R., Lisunov, K., Zahvalinsky, V.
Magnetoresistance (MR) of (Zn1-xMnx)3As2 (0 ≤ x ≤ 0.13) is measured at 4 < T < 20 K. In applied
Hopping magnetotransport of the band-gap tuningCu2Zn(SnxGe1-x)Se4 crystals
Lähderanta, E., Hajdeu-Chicaros, E., Shakhov, M., Guc, M., Bodnar, I. V., Arushanov, E., Lisunov, K. G.
an activated character within the whole investigated temperature range between T ~ 10  320 K, attaining a
Magnetotransport and conductivity mehanisms in Cu2ZnSnxGe1-xS4 single crystals
Lahderanta, E., Hajdeu-Chicaros, E., Guc, M., Shakhov, M., Zakharchuk, I., Bodnar, I. V., Arushanov, E., Lisunov, K. G., Боднарь, И. В.
–0.70, in the temperature range of T ~ 50–300 K in pulsed magnetic field of B up to 20 T. The Mott variable
Vacancy-type disorder in (Zn₁₋xMnx)₃As₂
Laiho, R., Lashkul, A. V., Zahvalinskii, V. S., Lisunov, K. G., Stamov, V. N.
Magnetization and Shubnikov-de Haas effect in diluted magnetic semiconductors (Cd₁₋x₋yZnxMny)₃As₂
Laiho, R., Lisunov, K. G., Zakhvalinskii, V. S.
Variable-range hopping conductivity and absence of a true metal–insulator transition in La₀.₇₋δCa₀.₃Mn₁₋ᵧFeᵧO₃
Laiho, R. ; Lisunov, K. G. ; Zakhvalinskii,V. S. ; Lahderanta, E. ; Salminen,J.
4.2–350 K, showing that La vacancies increase the effect of Fe doping by influencing electronic
Mechanisms of hopping conductivity of p-CdSb:Ni in magnetic field
Laiho R., Lahderanta E., Lashkul A. V., Lisunov K. G., Zakhvalinskii V. S.
is observed in # 2, and the Shklovskii-Efros VRH conductivity in # 1 and # 3 at T ≤2.5 K. However, in weak
Low-field magnetic properties of La₁-xSrxMn₁-yFeyO₃
Laiho, R., Lahderanta, E., Zakhvalinskii, V. S., Lashkul, A. V., Lisunov, R. G.
Hall effect in the new diluted magnetic semiconductor p-CdSb:Ni
Laiho R., Lashkul A.V., Lisunov K.G., Lahderanta E., Shakhov M.A.

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