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Recycling and disposal of gypsum-containing waste generated in the production of citric acid

Weak antilocalization and localization in Cd₃As₂ thin film

Processing of rare earth metal oxide for use as a master alloy in the metallurgical industry

Optimization of technological parameters for obtaining a concentrated aqueous solution of salts containing rare earth elements extracted from phosphogypsum

Hopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering

Berry Phase in single crystals of the dilute magnetic semiconductor (Cd₀.₇Zn₀.₂₈Mn₀.₀₂)₃As₂H) oscillations, observed in the temperature range T = 4.2 ÷ 30 K and at transverse magnetic field B = 0 ÷ 11 T

Hopping conduction in single crystals of the diluted magnetic semiconductor (Zn₁₋ₓFeₓ)₃As₂ (x=0.005)

Mixed conductivity analysis of single crystals of α‴- (Cd₁- x Zn x)₃As₂ (x = 0.45). The space group and tetragonal lattice parameters of single crystals are found to be I41/amd and a = b = 8

Transport evidence of mass-less Dirac fermions in (Cd₁-x-yZnxMny)₃As₂ (x+y=0.4).1nm-1, the charge carriers relaxation time due to dispersion tD =1.8×10-¹³ s, the velocity of charge

AC conductivity of amorphous and polycrystalline Cd₃As₂ films on single crystal substrates of Al₂O₃

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