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Power amplifier for short-pulse ionosonde stage, a stage of carbide silicon field-effect transistors with a limit operating voltage of ∼1000 V
Output Characteristics of Graphene Field Effect Transistors output characteristics. The aim was to simulate the output characteristics of field effect transistors
Dielectric influence on IV curve of graphene field effect transistor, and then transferred to the silicon dioxide on a silicon wafer. The channel of the transistor has been formed
Output Characteristics of Graphene Field Effect Transistors output characteristics. The aim was to simulate the output characteristics of field effect transistors
Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistorInvestigation of the radiations effect on the electrical characteristics of a junction field-effect
A supersensitive silicon nanowire array biosensor for quantitating tumor marker ctDNA diagnosis, targeted therapy and prognosis. Here, for the first time, a field effect transistor (FET
Approaches to implementation of the ion-sensitive field-effect transistor compact modelsApproaches to implementation of the ion-sensitive field-effect transistor compact models
Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardnessOptimization of structural and technological parameters of junction field-effect transistor
Porous Silicon Templates for Superconducting DevicesThe use of porous silicon (PS) templates in the field of superconducting nanoelectronics
Нитрид-галлиевый транзистор с высокой подвижностью электронов с эффективной системой теплоотвода на основе графена of the research are the structures fabricated on sapphire, silicon and silicon carbide substrates. The subject
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