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По вашему запросу найдено документов: 160602

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Usage of cobalt oxide particles as precursor for FEBID: Ab initio study
Skachkova, V., Tamuliene, J., Stempitsky, V.
Exchange interaction in zinc oxide doped by cobalt
Baranava, M. S., Danilyuk, A. L., Stempitsky, V. R., Баранова, М. С., Данилюк, А. Л., Стемпицкий, В. Р.
Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application
Hvazdouski, D. C., Stempitsky, V.
Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor
Dvornikov, O. V., Lovshenko, I., Stempitsky, V., Khanko, V. T.
Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness
Dvornikov, O. V., Lovshenko, I., Stempitsky, V., Khanko, V. T.
Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system
Volcheck, V. S., Lovshenko, I. Yu., Stempitsky, V. R.
Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis
Volcheck, V. S., Stempitsky, V. R.
Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis
Volcheck, V. S., Stempitsky, V. R.
Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model
Volcheck, V. S., Stempitsky, V. R.
Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
Lovshenko, I. Yu., Khanko, V. T., Stempitsky, V. R.

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