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Актуальный взгляд на процессы рубцевания кожи и клинический опыт консервативного лечения келоидного рубца
Жукова О.В., Поршина О.В., Острецова М.Н., Лемытская В.Е.
, cryotherapy, compression therapy and silicone bandages are the most effective and pathogenically rationalised
Transient current in nematic cells containing a silicon substrate
Kucheev, S. I.
crystal cell containing a silicon substrate have been investigated. It is shown that the curves
Optical interconnects between silicon chips based on light-emitting diodes on nanostructured silicon
Leshok, A. A., Dolbik, A. V., Le Dinh Viа, Matskevichа, A. I., Vysotskii, V. B., Shvedov, S. V.
Design and manufacturing technology of optical interconnects between silicon chips have been
Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing
Grevtsov, N., Chubenko, E., Gavrilin, I., Goroshko, D., Goroshko, O., Tsiniaikin, I., Bondarenko, V., Murtazin, M., Dronov, A., Gavrilov, S.
Silicon-germanium alloy films were formed by electrochemical deposition of germanium into porous
Emission properties of an array of silicon nanocones
Trafimenko, A., Danilyuk, A. L.
Emission properties of an array of silicon nanocones
Surface magnetism of silicon [111](7×7) and [001](2×1) surfaces: Quantum-chemical approach
Sheka E.F., Nikitina E.A., Aono M.
When discussing bare surfaces of silicon crystal, the concept of dangling bonds is widely used
The effect that nitrogen ion irradiation and the deposition of a nanosize-thick carbon coating have on microhardness and crack-growth resistance in silicon
Kolpakov, A. Ya., Druchinina, O. A., Kharchenko, V. A.
The behavior of silicon wafers in the starting state (after both irradiation with nitrogen ions
Влияние температуры быстрой термической обработки на электрофизические свойства пленок никеля на кремнии
Соловьёв, Я. А., Пилипенко, В. А., Solovjov, Ja. А., Pilipenko, V. A.
resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal
Germanium electrodeposition into porous silicon for silicon-germanium alloying
Grevtsov, N., Chubenko, E., Bondarenko, V., Gavrilin, I., Dronov, A., Gavrilov, S.
of anodic mesoporous silicon formed on n-type highly-doped (100) silicon wafers is described. The effect
Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors
Grevtsov, N., Lopato, U., Dolgyi, A., Chubenko, E., Bondarenko, V., Smirnov, A., Stsiapanau, A., Dronov, A., Gavrilin, I., Gavrilov, S.
A variety of micro- and nanocomposite materials based on electrochemically-acquired porous silicon

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