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Optimal Te-doping in GaSe for non-linear applicationsOptimal Te-doping in GaSe for non-linear applications
New data on mineralogy of volcanic-hosted massive sulfide deposits in the UralsThe study of mode of occurrence of Au, Ag, Bi, Se and Te covers a row of giant VMS deposits
Mossbauer study of a collinear spin density wave phase in Fe1.125Te to investigate peculiarities of the collinear spin density wave phase in Fe1.125Te. Mossbauer spectra were
Electric field effect on variable-range hopping conductivity in Bi1.9Lu0.1Te3Electric field effect on low-temperature electrical resistivity of n-type Bi1.9Lu0.1Te3
Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature rangeFeatures of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4
The Problem of Hedging Risks in the European Energy Strategy: The Role and Place of Natural Gas exclusive license to Springer Nature Switzerland AG 2023.
Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1-xTex crystalsGaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt
Выходы 105Ag, 106mAg, 108mAg, 110mAg, 111Ag в реакциях с протонами, дейтронами и а-частицамиВыходы 105Ag, 106mAg, 108mAg, 110mAg, 111Ag в реакциях с протонами, дейтронами и а-частицами
Униполярные nBn-структуры и детекторы на основе HgCdTeИзготовлены многослойные униполярные гетероэпитаксиальные структуры на основе HgCdTe, выращенного
On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2
Страница 10 из 100502
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