Spectral ellipsometry of cobalt-ions implanted silicon surface© (2015) Trans Tech Publications, Switzerland. Monocrystalline
silicon wafers
implanted by cobalt
Fabrication of nanoporous silicon by ion implantation© Springer Science+Business Media Dordrecht 2015. Ion
implantation is an advanced new technological
New way for synthesis of porous silicon using ion implantationA novel idea to create a porous
silicon layers by low-energy high-dose metal-ion
implantation Spectral ellipsometry of cobalt-ions implanted silicon surface© (2015) Trans Tech Publications, Switzerland. Monocrystalline
silicon wafers
implanted by cobalt
Fabrication of nanoporous silicon by ion implantation© Springer Science+Business Media Dordrecht 2015. Ion
implantation is an advanced new
Fabrication of nanoporous silicon by ion implantation© Springer Science+Business Media Dordrecht 2015. Ion
implantation is an advanced new technological
New way for synthesis of porous silicon using ion implantationA novel idea to create a porous
silicon layers by low-energy high-dose metal-ion
implantation Ag+-ion implantation of silicon on the optical reflection of the Si surface layers
implanted by silver ions at low energies of 30 keV over a wide
Fabrication of nanoporous silicon by ion implantation© Springer Science+Business Media Dordrecht 2015. Ion
implantation is an advanced new