Model reformy spolecznej na bialorusi (miedzy polska a rosja)Model reformy spolecznej na bialorusi (miedzy polska
a rosja)
A fault-tolerant combinational circuit designA fault-tolerant combinational circuit design
A fault-tolerant sequential circuit design for SAFs and PDFs soft errorsA fault-tolerant sequential circuit design for SAFs and PDFs soft errors
Rupture of a uterus: last, real, futureIn this article results research of women with ruptures of
a uterus, the main reasons (
a hem
Localization of electrons in dome-shaped GeSi/Si islandsYakimov, A. I.,
Bloshkin, A. A.,
Armbrister, V. A.,
Kuchinskaya, P. A.,
Dvurechenskii, A. V.,
Kirienko, V. V. We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in
a Si
Suppression of hole relaxation in small sized Ge/Si quantum dots–Krastanov growth mode while keeping the deposition temperature to be the same.
A device with smaller dots is found
Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots that the binding energy of electrons increases with
a decrease in the thickness of
a silicon spacer
Quantum dot based mid-infrared photodetector enhanced by a hybrid metal-dielectric optical antennaQuantum dot based mid-infrared photodetector enhanced by
a hybrid metal-dielectric optical antenna