Материалов:
1 082 141

Репозиториев:
30

Авторов:
761 409

По вашему запросу найдено документов: 356759

Страница 1 из 35676

Parameters comparison between quantum dot infrared detectors of Ge/Si and HgCdTe detectors
Douhan, Rahaf M. H., Kokhanenko, Andrey P., Lozovoy, Kirill A.
Molecular dynamics simulations of the growth of Ge on Si
Lloyd, Adam, Smith, Roger, Lozovoy, Kirill A., Voytsekhovskiy, Alexander V., Kokhanenko, Andrey P., Zhoua, Ying
Ge/Si avalanche photodiodes dark current
Khomyakova, Kristina I., Douhan, Rahaf M. H., Deeb, Hazem, Kokhanenko, Andrey P., Lozovoy, Kirill A.
Bats as a little*known reservoir of especially dangerous infections
Makarov V.V., Lozovoy D.A.
This article closes a series of researches on viruses that are ecologically related to bats. Some
Viruses and Chiroptera. Epidemiological features of susceptibility
Makarov V.V., Lozovoy D.A.
Single element 2D materials and methods of their epitaxial synthesis
Izhnin, Igor I., Voytsekhovskiy, Alexander V., Kokhanenko, Andrey P., Lozovoy, Kirill A., Dirko, Vladimir V., Vinarskiy, V. P., Fitsych, Olena I.
Single element 2D materials and methods of their epitaxial synthesis
Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Lozovoy, Kirill A., Kokhanenko, Andrey P., Voytsekhovskiy, Alexander V., Pishchagin, Anton A.
GE/SI quantum dots formation by the method of molecular beam epitaxy
Lozovoy, Kirill A., Kokhanenko, Andrey P., Satdarov, Vadim G., Kalin, Eugeniy A., Voytsekhovskiy, Alexander V.
Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions
Lozovoy, Kirill A., Kokhanenko, Andrey P., Satdarov, Vadim G., Voytsekhovskiy, Alexander V.
Influence of edge energy on modeling the growth kinetics of quantum dots
Lozovoy, Kirill A., Kokhanenko, Andrey P., Voytsekhovskiy, Alexander V.

Страница 1 из 35676

Фасеты

Партнеры

КФУ
ТГУ
Elpub
СФУ
Webpublishers

Индексация

BASE
WorldCat
OpenAIRE
EDS
core