Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on SiliconKuznetsova, T.,
Lapitskaya, V.,
Solovjov, J. A.,
Chizhik, S.,
Pilipenko, V.,
Aizikovich, S. with preservation of the fine grain morphology of the surface, accompanied by
a reduction in the grain sizes, specific
Control of Integrated Circuits Crystals' Surface Microrelief and Defects of Hetero- and Submicrostructures by the Atomic Force Microscopy MethodLapitskaya, V. А.,
Chizhik, S. А.,
Lutsenko, Е. V.,
Solovjov, J. А.,
Nasevich, А. А.,
Liutsko, K. S.,
Petlitskaya, Т. V.,
Makarevich, V. B.,
Yu, Guangbin The aim of the work was to study the structure and defects of
a channel transistor with two types
Формирование силицида никеля быстрой термообработкой в режиме теплового балансаПилипенко, В. А.,
Соловьев, Я. А.,
Гайдук, П. И.,
Pilipenko, V. A.,
Solovjov, J. A.,
Gaiduk, P. I. . The rapid thermal treatment was carried out in
a heat balance mode by irradiating the substrates backside
Структура и морфология слоев CrSi 2, сформированных при быстрой термообработкеСоловьёв, Я. А.,
Пилипенко, В. А.,
Гайдук, П. И.,
Solovjov, J. A.,
Pillipenko, V. A.,
Gaiduk, P. I. was investigated. Chromium films of about 30 nm
thickness were deposited by magnetron sputtering of
a Моделирование нагрева кремниевых пластин при быстрой термической обработке на установке «УБТО 1801»Соловьёв, Я. А.,
Пилипенко, В. А.,
Яковлев, В. П.,
Solovjov, J. A.,
Pilipenko, V. A.,
Yakovlev, V. P. flow of constant density light. As
a result,
a mathematical model of silicon wafer temperature
Формирование окрашенных нанокапсул методом струйной печатиЖагиро, П. В.,
Губаревич, А. А.,
Муха, Е. В.,
Степанов, А. А.,
Соловьѐв, Я. А.,
Смирнов, А. Г.,
Jaguiro, P. V.,
Hubarevich, А. A.,
Mukha, Y. V.,
Stsiapanau, А. A.,
Solovjov, Ya. A.,
Smirnov, А. G. formation process was developed and researched by ink-jet printing in
a film of nanostructural anodic