Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation by implantation with Ag+
ions at energy of 30 keV,
current density of 8 μA/cm2 for various doses from 6
ELECTROOSMOTIC PERMEABILITY OF ION-EXCHANGE MEMBRANES.The purpose of this work is to study the influence of the
current density and of the concentration
Formation of Porous Germanium Layers by Silver-Ion Implantation polished c-Ge plate to a dose of 1.5 × 1017
ion/cm2 at an
ion beam-
current density of 5 μA/cm2. Examination
ELECTROOSMOTIC PERMEABILITY OF ION-EXCHANGE MEMBRANES.The purpose of this work is to study the influence of the
current density and of the concentration