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Spectral ellipsometry of cobalt-ions implanted silicon surface ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated
Carbonization in boron-ion-implanted polymethylmethacrylate as revealed from Raman spectroscopy and electrical measurements of 40 keV boron-ion-implanted polymethylmethacrylate with ion doses from 6.25 × 1014 to 5.0 × 1016 ions
Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied
The Model of Ion Turbulent Heating in an ECRIS charge to mass in an electron cyclotron resonance ion source (ECRIS). It was shown that the ion heating
Sputtering of silicon surface by silver-ion implantation-energy high-dose implantation by Ag+ ions with energy E = 30 keV and current density J = 8 μA/cm2
Swelling and sputtering of porous germanium by silver ions of the radiation dose D = 6.2·1014–1.5·1017 ion/cm2 where observed. Using X-ray photoelectron spectroscopy
Metal ions as effectors of enzymesEffects of metal ions as modulators of enzymes are considered. Data on inhibition and activation
Dynamic chaos phenomenon at axial channeling and over-barrier motion of relativistic ions in crystalsCharacteristics of relativistic ion motion through a crystal near one of the crystal axes
Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation ion implantation into Si. In order to demonstrate this technique, the implantation at room temperature
Calix[4]resorcinarene ionophore in the ion-selective electrodes with plasticized poly(vinylchloride) membranes) plasticized membrane of an ion-selective electrode (ISE). Calixarene interactions with quaternary ammonium
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