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Design optimization of the gallium nitride high electron mobility transistor with graphene and boron nitride heat-spreading elementsThe self-heating effect has long been a persistent issue for high electron mobility transistors
Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysisThe effect of the presence of iron-induced acceptor centers in the gallium nitride high electron
Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulationIncreasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical
Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis interpreter. The electrical characteristics of a simple AlGaAs/GaAs high electron mobility transistor were
Нитрид-галлиевый транзистор с высокой подвижностью электронов с эффективной системой теплоотвода на основе графена nitride high-electron mobility transistor with a graphene-based heat removal system. The objects
Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysisAt temperatures higher than the room temperature, a two-dimensional electron gas (2DEG) formed
Лавинный пробой транзистора с высокой подвижностью электронов на основе нитрида галлия с теплоотводящим элементом на основе графенаAvalanche breakdown in gallium nitride high electron mobility transistors enhanced by graphene heat
Компьютерное моделирование сенсоров токсичных наночастиц на основе гетероструктурного полевого транзистора at the application of heterostructure field-effect transistors – high electron mobility transistors–as a base
The GAN Era has Arrived in SATCOM Power AmplifiersIn this paper features, characteristics and comparisons of gallium nitride high electron mobility
Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene hoheycomb lattice
structure and unique properties such as ambipolarity, high carrier
mobility
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