Environmental Impact of Cast Iron Production for
thermal etching. The reagent given in Appendix 2 “Composition of reagents for
etching thin sections
Effects of etching duration on silicon quantum dot size and photoluminescence quantum yieldYizhou He,
Qianxi Hao,
Chi Zhang,
Qi Wang,
Wenxin Zeng,
Jiamin Yu,
Xue Yang,
Xiaowei Guo,
Shaorong Li,
Lazarouk, S. K. The synthesis of silicon quantum dots (SiQDs) via
thermal pyrolysis is considered
promising due
Selective electrochemical deposition of indium in-between silicon nanowire arrays fabricated by metal-assisted chemical etchingGrevtsov, N.,
Chubenko, E.,
Petrovich, V.,
Bondarenko, V.,
Gavrilin, I.,
Dronov, A.,
Gavrilov, S. etching of lightly-doped (100)-oriented silicon wafers is evaluated. It is concluded based on SEM and EDX
Повышение селективности травления нитрида кремния к диоксиду кремния субмикронных интегральных схем a solution for increasing the selectivity of
etching of silicon nitride obtained by chemical vapor
Method for stepped etching of optical glass fibersA method for stepped
etching of optical glass fibers using various compositions of
etching agents
Reactive ion etching parameters optimization in victory processA simulation of reactive ion
etching (RIE) was carried out using Victory Process of Silvaco
Влияние химически модифицированного сверхвысокомолекулярного полиэтилена на свойства бутадиен-нитрильного каучукаШадринов, Н. В.,
Гоголев, В. Д.,
Исакова, Т. А.,
Shadrinov, Nikolay V.,
Gogolev, Vladimir D.,
Isakova, Tatyana A. of UHMWPE. The modification of UHMWPE was carried out by chemical
etching in a solution of chromic acid