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Сравнительная оценка альтернативных методов контроля качества и диагностики монтажных конструкций «п/п кристалл – подложка»
Волкенштейн, С. С., Дайняк, И. В., Хмыль, А. А., Wolkenstein, S. S., Dayniak, I. V., Khmyl, A. A.
concerning to study “semiconductor chip – substrate” assemblies peculiarity, has given the chance
Simulation of radiation damage of the semiconductor devices
Miskiewicz, S., Komarov, A., Komarov, F., Yuvchenko, V., Zayats, G.
Semiconductor devices are extensively used in many sectors of modern electronics. Operation under
Thermal conductivity influence on failures of semiconductor IСs under powerful EMP action
Zhuravliov, V. I., Alexeev, V. F., Журавлев, В. И., Алексеев, В. Ф.
Thermal transfer in semiconductor integrated circuits under external HEMP action is considered
Semiconductor Optical Amplifiers For Reach Extension of WDM/TDM Gigabit Passive Optical Network
Tussupov, A. D., Tokhmetov, A. T., Listopad, N. I., Тусупов, А. Д., Тохметов, А. Т., Листопад, Н. И.
limitation of PON from 20km to 60 km. with analysis of semiconductor optical amplifiers, for reach extension
Electronic Structure of ZnO Quantum Dots Studied by High-Frequency EPR, ESE, ENDOR and ODMR Spectroscopy
Baranov P., Romanov N., Bundakova A., Orlinskii S., Donegá C., Schmidt J.
as monitored by ENDOR quantitatively reveal the transition from semiconductor to molecular properties upon
Structure and properties of ln'0.5ln’’0.5bacufeo5+? (ln', ln’’ -ree) solid solutions
Klyndyuk, A. I., Chizhova, E. A.
+?oxides were found to be the p-type semiconductors. It was shown that structural characteristics, oxygen
Способы получения объемных структур соединений группы (AⅠ In5S8)1-x – (In2S3)x
Фещенко, А. А., Feshchanka, A. A.
. The production of high-quality semiconductors of the(AIIn5S8)1-x - (In2S3)x group compounds, suitable for use
Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride
Baglov, A. V., Chubenko, E. B., Hnitsko, A. A., Borisenko, V. E., Malashevich, A. A., Uglov, V. V., Чубенко, Е. Б., Баглов, А. В., Чубенко, Е. Б., Гнитько, А. А., Борисенко, В. Е., Малашевич, А. А., Углов, В. В.
Interrelationship between the structure and optical properties of graphite-like semiconductor
Modifying the catalytic and adsorption properties of metals and oxides
Yagodovskii V.D.
of induced adsorption on metals and semiconductors with respect to small fillings of θ ~ 0
AFM study of charging of the Au-n-GaAs contact
Shmargunov, A. V., Bozhkov, V. G., Novikov, Vladimir A.
Effect of charging of structural elements of a metal–semiconductor Au–n-GaAs contact

Страница 20 из 5172

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