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Photonic and Terahertz applications as the next gallium arsenide market driver
Kulchitsky Nikolay A.
continued. Binary semiconductor GaAs compound is a conventional MW electronics material. Until recently Ga
Modeling of optical properties of hybrid metal-organic nanostructures
Ponyavina, A., Barbarchyk, K., Zamkovets, A., Tikhomirov, S.
structure of plasmonic nanoparticles included in a hybrid metal-semiconductor nanocomposite, it is possible
Нитрид-галлиевый транзистор с высокой подвижностью электронов с эффективной системой теплоотвода на основе графена
Волчёк, В. С., Ловшенко, И. Ю., Шандарович, В. Т., Дао Динь Ха, Volcheck, V. S., Lovshenko, I. Yu., Shandarovich, V. T., Dao Dinh Ha
of the research are the structures fabricated on sapphire, silicon and silicon carbide substrates. The subject
Magnetic properties of CdSb doped with Ni
Laiho, R., Lahderanta, E., Lashkul, A. V., Lisunov, K. G., Zakhvalinskii, V. S.
Magnetic properties of the group II-V semiconductor CdSb single crystals doped with Ni (2at
Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
Dzyadukh, Stanislav M., Voytsekhovskiy, Alexander V., Gorn, Dmitriy Igorevich, Nesmelov, Sergey N.
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS
Electronic structure of CuCl1-xBrx solid solutions: first-principles calculations in the meta-GGA approximation
Kosobutsky, Alexey V., Gordienko, A. B.
The electronic structure of CuCl and CuBr compounds and their solid solutions CuCl1–xBrx (x = 0
Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
Dzyadukh, Stanislav M., Voytsekhovskiy, Alexander V., Gorn, Dmitriy Igorevich, Nesmelov, Sergey N.
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS
Interface features and electronic structure of Bi2SiO5/β-Bi2O3 heterojunction
Kovaleva, Evgenia A., Vodyankina, Olga V., Svetlichnyi, Valerii A.
Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means
Structural, optical and electrical conductivity properties of stannite Cu₂ZnSnS₄
Zakhvalinskii, V. S., Nguyen Hong, Pham, T. T., Dang, N. T., Piliuk, E. A., Taran, S. V.
Structural, optical and electrical conductivity properties of stannite Cu₂ZnSnS₄
Моделирование подвижности электронов в органических материалах оптоэлектроники
Беляев В.В., Чаусов Д.Н., Соломатин А.С., Кучеров Р.Н., Кумар С., Маргарян А.Л., Акопян Н.Г., Ермакова М.В., Беляев А.А., Ханна Г.М., Вечканов А.Р., Андреев А.В.
Subject of study. Organic optoelectronics materials with complex molecular structure; intermo

Страница 21 из 5172

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