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Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots applications based on semiconductor materials, and after the big success of quantum well structures
Surface states and annihilation characteristics of positrons trapped at the (100) and (111) surfaces of silicon [57] with relevant Si core-level electrons differ significantly for two faces of clean Si, an elemental semiconductor
Prospects for the optical cooling of CdS nanocomposites of their spectroscopic properties. The physical principles of laser cooling in semiconductor structures are discussed
Surface states and annihilation characteristics of positrons trapped at the (100) and (111) surfaces of silicon [57] with relevant Si core-level electrons differ significantly for two faces of clean Si, an elemental semiconductor
Structural properties and variable-range hopping conductivity of Cu₂SnS₃In the present work, we investigated the elemental composition, structural and electrical
Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrierMagnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure
Magnetization and Shubnikov-de Haas effect in diluted magnetic semiconductors (Cd₁₋x₋yZnxMny)₃As₂ of (Cd1-x-yZnxMny)3As2 magnetic semiconductors. Analysis of SdH oscillations; Exchange constant
Charging properties of the silicon / zinc oxide nanoparticle heterostructureZinc oxide ZnO is a semiconductor with a direct band gap of 3.37 eV at room temperature, which
First-principles study of stability and electronic properties of single-element 2D materials2,
and Bi2) by ab initio calculations. The calculations of structural and mechanical properties of 2
Local analysis of porous silicon structure fabricated by nontraditional approach.5×1017 ion/cm2 was carried out. Surface nanoporous Si structures were studied by scanning electron microscope
Страница 18 из 5172
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