Материалов:
1 005 012

Репозиториев:
30

Авторов:
761 409

По вашему запросу найдено документов: 51719

Страница 19 из 5172

Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Yu.
The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown
Estimation of the impact of semiconductor device parameters on the accuracy of separating a mixed production batch
Shkaberina, G. Sh., Orlov, V. I., Tovbis, E. M., Sugak, E. V., Казаковцев, Л. А.
of semiconductor devices for the space industry into homogeneous production batches. The method of factor analysis
Self-powered photo diodes based on Ga2O3/n-GaAs structures
Kalygina, Vera M., Kiselyeva, O. S., Kushnarev, Bogdan O., Oleinik, Vladimir L., Petrova, Julianna S., Tsymbalov, Alexander V.
characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ=254 nm
Berry Phase in single crystals of the dilute magnetic semiconductor (Cd₀.₇Zn₀.₂₈Mn₀.₀₂)₃As₂
Zakhvalinskii, V. S., Nikulicheva, T. B., Pilyuk, E. A.
magnetic semiconductor (Cd₀.₇Zn₀.₂₈Mn₀.₀₂)₃As₂ (CZMA). Based on analysis of the Shubnikov-de Haas (Sd
Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal
Makovskaya, T. I., Danilyuk, A. L., Krivosheeva, A. V., Shaposhnikov, V. L., Borisenko, V. E., Маковская, Т. И., Данилюк, А. Л., Кривошеева, А. В., Шапошников, В. Л., Борисенко, В. Е.
Two-dimensional (2D) semiconductor crystals can be applied to further increase the efficiency
Positron annihilation induced Auger electron spectroscopic studies of reconstructed semiconductor surfaces
Fazleev N., Reed J., Starnes S., Weiss A.
to chemical composition and atomic structure of the topmost layers of the surface. Theoretical annihilation
Study of the photovoltage in Mn/SiO2/n-Si MOS structure at cryogenic temperatures
Bondarev, I. A., Rautskii, M. V., Yakovlev, I. A., Volochaev, M. N., Lukyanenko, A. V., Tarasov, A. S., Volkov, N. V.
Study of the photovoltage in Mn/SiO2/n-Si MOS structure at cryogenic temperatures
Influences of metal magnetic state and MIS structure composition on magnetoimpedance effect caused by interface states
Smolyakov, D. A., Tarasov, A. S., Yakovlev, I. A., Masyugin, A. N., Volochaev, M. N.
Influences of metal magnetic state and MIS structure composition on magnetoimpedance effect caused
Formation of a periodic diffractive structure based on poly(methyl methacrylate) with ion-implanted silver nanoparticles
Galyautdinov M., Nuzhdin V., Fattakhov Y., Farrakhov B., Valeev V., Osin Y., Stepanov A.
of their probing with semiconductor laser radiation in the visible spectral range.
Crystal structure, physicochemical, and sensory properties of solid solutions Bi[1-x]La[x]Fe[1-x]Co[x]O[3] (x = 0, 0.05, 0.1)
Glinskaya, Anna, Petrov, Gennady, Romanovski, Valentin
by a rhombohedrally distorted perovskite structure. It was shown that a slight isovalent substitution

Страница 19 из 5172

Фасеты

Партнеры

КФУ
ТГУ
Elpub
СФУ
Webpublishers

Индексация

BASE
WorldCat
OpenAIRE
EDS
core