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Исследование структуры полупроводниковой фазы силицида титана
Анисович, А. Г., Маркевич, М. И., Щербакова, Е. Н.
Study of the structure of the semiconductor phase of titanium silicide
Synthesis and magnetic properties of solid solutions of a diluted magnetic semiconductor (Zn₁-xFex)₃As₂
Zakhvalinskii, V. S., Nikulicheva, T. B., Pilyuk, E. A., Trubaev, A. A., Usatyy, I. M.
The magnetic properties of the new semimagnetic semiconductor (Zn₁-xFex)₃As₂ with x < 0.04 have
Modelling for semiconductor spintronics
Saikin S., Pershin Y., Privman V.
in semiconductor structures. As a review of the work by the authors' group, several examples of applications
The theory of ESR hyperfine-structure narrowing as applied to wide-gap semimagnetic semiconductors
Aliev M., Tagirov L., Tagievf V.
The theory of ESR hyperfine-structure exchange narrowing is developed. The kinetic equations
Influence of diamond-like structure of nanosized layers on their electrical conductivity
Shmanay, Y. E.
. In addition, the structure and properties of the polyimide substrate were studied for reference. Methods of X
Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure
Velichko, O. I., Aksenov, V. V., Величко, О. И., Аксенов, В. В.
semiconductor structure was formulated and analyzed. The analytical solution of the set
The effects of surface reconstruction and electron- positron correlation on the annihilation characteristics of positrons trapped at semiconductor surfaces
Fazleev N., Jung E., Weiss A.
and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers
Многослойные структуры на основе нитрида кремния для мембранных микроэлектромеханнческих систем и полупроводниковых приборов
Ковальчук, Н. С., Kovalchuk, N. S.
мембран микроэлектромеханических устройств.The aim of the wort, research and development of structures
Химический синтез наноструктурированных систем с хемочувствительными свойствами
Пянко, А. В., Жилинский, В. В., Горох, Г. Г.
with wide-zone metal oxide semiconductors were represented. Methods of using of semiconductor metal oxides
Определение интенсивностей рассеивания электронов в одиночном слое графена
Муравьев, В. В., Мищенко, В. Н., Murav'ev, V. V., Mishchenka, V. N.
material for the creation of new semiconductor devices with good output characteristics. Тhe prevalence

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