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Electron irradiation degradation of AlGaInP/GaAs light‐emitting diodes, the radiation tolerance of these diodes increases up to 50 times when the temperature is lowered down to 16 K
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light
A theoretical and experimental investigation on the SHS synthesis of (HfTiCN)-TiB2 high-entropy composite composition of the HfTiCN compound, the USPEX code was used with the CASTEP interface at 0K. According
Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)
New Holocene refugia of giant deer (Megaloceros giganteus Blum.) in Siberia: updated extinction patterns
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