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Study of the switching characteristics of gas S-diodes
Barmin, Valery, Priputnev, Pavel, Konev, Vladimir, Maltsev, Sergei, Romanchenko, Ilya V., Prudaev, Ilya A.
Properties of metall-TiO2-Si structures on an alternating signal
Kalygina, V. M., Prudaev, Ilya A., Tolbanov, Oleg P., Makarov, V. A.
Photoelectrical characteristics of Tio 2-n-Si heterostructures
Kalygina, V. M., Prudaev, Ilya A., Tolbanov, Oleg P., Atuchin, Victor V., Egorova, I. S.
Sensor properties of metal-Ga oxide-GaAs structures
Kalygina, V. M., Prudaev, Ilya A., Tolbanov, Oleg P., Gaman, V. I.
Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization
Kopyev, V. V., Prudaev, Ilya A., Avdochenko, B. I.
Photoelectrical characteristics of TiO2-Si heterostructures
Kalygina, V. M., Prudaev, Ilya A., Tolbanov, Oleg P., Egorova, I. S.
Effect of thermal annealing on electrical characteristics of Ga2Oy-GaAs structures
Kalygina, V. M., Remizova, I. L., Tolbanov, Oleg P., Prudaev, Ilya A.
Photoelectrical characteristics of GaxOy-GaAs-structures
Kalygina, V. M., Remizova, I. L., Tolbanov, Oleg P., Prudaev, Ilya A.
Photoelectrical characteristics of TiO2-N-Si heterostructures
Kalygina, Vera Mixajlovna, Prudaev, Ilya A., Tolbanov, Oleg P., Atuchin, Victor V., Egorova, I. S.
Microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptors
Prudaev, Ilya A., Kopyev, Viktor V., Oleinik, Vladimir L.
-diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a

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