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Features of radiation changes in electrical properties of InAlN/GaN HEMTs

Afonin, A. G., Brudnyi, Valentin N., Brudnyi, P. A., Velikovskii, L. E.

of InAlN/GaN HEMT structures is analyzed. The features of initial electronic properties of the InAlN

Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb

Brudnyi, Valentin N., Kamenskaya, I. V., Brudnyi, P. A.

Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate

Boiko, V. M., Kolin, N. G., Kosobutsky, Alexey V., Korulin, A. V., Brudnyi, P. A., Ermakov, V. S., Brudnyi, Valentin N.

The effects of fast neutron (up to 1.75 × 1020 f.n. cm–2) and fast plus thermal neutron (up to 3

On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

Brudnyi, Valentin N., Ermakov, V. S., Kolin, N. G., Korulin, A. V., Boiko, V. M.

On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor

Brudnyi, Valentin N., Sarkisov, Sergey Yu., Kosobutsky, Alexey V.

Electron irradiation degradation of AlGaInP/GaAs light‐emitting diodes

Brudnyi, Valentin N., Oleinik, Vladimir, Marmaluk, Alexander A., Prudaev, Ilya A.

Structural, elastic and electronic properties of GaSe under biaxial and uniaxial compressive stress

Kosobutsky, Alexey V., Sarkisov, Sergey Yu., Brudnyi, Valentin N.

Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights

Brudnyi, Valentin N., Sarkisov, Sergey Yu., Kosobutsky, Alexey V.

p-type conductivity of the intentionally undoped epsilon-GaSe, β-GaS and GaTe and n

Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN

Romanov, I. S., Prudaev, Ilya A., Brudnyi, Valentin N.

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells

Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates

Romanov, I. S., Brudnyi, Valentin N., Kopyev, V. V., Novikov, Vadim A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V., Prudaev, Ilya A.

The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN

Страница 1 из 13429