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Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure
Almaev, D. A., Almaev, Aleksei V., Kopyev, Viktor V., Nikolaev, Vladimir I., Pechnikov, Aleksei I., Stepanov, Sergey I., Boyko, M. E., Butenko, Pavel N., Scheglov, Mikhail P.
Effect of ambient humidity on the electrical conductivity of polymorphic Ga2O3 structures
Almaev, Aleksei V., Nikolaev, Vladimir I., Stepanov, Sergey I., Yakovlev, Nikita N., Pechnikov, Aleksei I., Chernikov, Evgeniy V., Kushnarev, Bogdan O.
on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I–V characteristics
Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
Yakovlev, Nikita N., Almaev, Aleksei V., Nikolaev, Vladimir I., Kushnarev, Bogdan O., Pechnikov, Aleksei I., Stepanov, Sergey I., Chikiryaka, Andrei V., Timashov, R. B., Scheglov, Mikhail P., Butenko, Pavel N., Almaev, D. A., Chernikov, Evgeniy V.
Effect of oxygen on the Gas-sensitive properties of α-Ga2O3/ε-Ga2O3 structures
Almaev, Aleksei V., Nikolaev, Vladimir I., Stepanov, Sergey I., Yakovlev, Nikita N., Pechnikov, Aleksei I., Chernikov, Evgeniy V., Kushnarev, Bogdan O.
Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures
Almaev, Aleksei V., Nikolaev, Vladimir I., Yakovlev, Nikita N., Butenko, Pavel N., Stepanov, Sergey I., Pechnikov, Aleksei I., Scheglov, Mikhail P., Chernikov, Evgeniy V.
Gas sensors based on pseudohexagonal phase of gallium oxide
Almaev, Aleksei V., Nikolaev, Vladimir I., Butenko, Pavel, Stepanov, Sergey I., Pechnikov, Aleksei I., Yakovlev, Nikita N., Sinyugin, Igor, Shapenkov, Sevastian, Scheglov, Mikhail P.
. The highest sensitivity to H2 is achieved at low applied voltages (≤7.9 V). In contrast, the highest
Gas−sensing properties of In2O3−Ga2O3 alloy films
Nikolaev, Vladimir I., Almaev, Aleksei V., Kushnarev, Bogdan O., Pechnikov, Aleksei I., Stepanov, Sergey I., Chikiryaka, Andrei V., Timashov, R. B., Scheglov, Mikhail P., Butenko, Pavel N., Chernikov, Evgeniy V.
Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity
Yakovlev, Nikita N., Almaev, Aleksei V., Butenko, Pavel N., Mikhaylov, A. N., Pechnikov, Aleksei I., Stepanov, Sergey I., Timashov, R. B., Chikiryaka, A. V., Nikolaev, Vladimir I.
keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer
Effect of oxygen on the electrical conductivity of Pt-contacted α-Ga2O2/ε(κ)-Ga2O3 MSM structures on patterned sapphire substrates
Yakovlev, Nikita N., Nikolaev, Vladimir I., Stepanov, Sergey I., Almaev, Aleksei V., Pechnikov, Aleksei I., Chernikov, Evgeniy V., Kushnarev, Bogdan O.
below 7.5 V. This effect can be attributed to the chemisorption of oxygen molecules on the surface
Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity
Yakovlev, Nikita N., Almaev, Aleksei V., Butenko, Pavel N., Tetelbaum, David, Mikhaylov, Alexey, Nikolskaya, Alena, Pechnikov, Aleksei I., Stepanov, Sergey I., Boiko, Mikhail, Chikiryaka, Andrei V., Nikolaev, Vladimir I.
that irradiation with a dose of 8 × 1012– 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation

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