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Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity

Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear

Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity

Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures

Gas sensors based on pseudohexagonal phase of gallium oxide

Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure

Gas−sensing properties of In2O3−Ga2O3 alloy films

High sensitivity low-temperature hydrogen sensors based on SnO2/κ(ε)-Ga2O3:Sn heterostructureThe structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were

Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

Geometric structures of the N,N-dimethylamides and N-methylanilides of arylsulfonic acids1. Dipole moments and components of the poiarizability tensor have been calculated for the S-N bond

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